GBU6A, GBU6B, GBU6D, GBU6G, GBU6J, GBU6K, GBU6M

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Vishay General Semiconductor

Revision: 27-Sep-13

2

Document Number: 88615

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

PARAMETER

TEST CONDITIONS SYMBOL

GBU6A

GBU6B

GBU6D

GBU6G

GBU6J

GBU6K GBU6M

UNIT

Maximum



instantaneous forward

voltage drop per diode

6.0 A

1.0

V

Maximum DC reverse

current at rated DC



blocking voltage per diode

5.0

μA

500

Typical junction



capacitance per diode

4 V, 1 MHz

211

94

pF

PARAMETER

SYMBOL

GBU6A

GBU6B

GBU6D

GBU6G

GBU6J

GBU6K GBU6M

UNIT

Typical thermal resistance

20

°C/W

2.5

ORDERING INFORMATION

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

GBU6J-E3/45

3.857

45

20

Tube

GBU6J-E3/51

3.857

51

250

Paper tray

0

50

100

150

0

2.0

4.0

6.0

125

75

25

Heatsink Mounting, T

C

Temperature (°C)

PCB Mounting, T

A

0.47 x 0.47" (12 x 12 mm) Copper Pads

0.375" (9.5 mm) Lead Length

60 Hz Resistive or Inductive Load

1.0 Cycle

T

Single Sine-Wave

1

10

100

25

50

75

100

125

150

175

Number of Cycles at 60 Hz