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BSS138-G Datasheet(PDF) 1 Page - Comchip Technology |
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BSS138-G Datasheet(HTML) 1 Page - Comchip Technology |
1 / 5 page MOSFET N-Channel 50-V(D-S) MOSFET Page 1 REV:A Mechanical data -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. BSS138-G QW-BTR40 Comchip Technology CO., LTD. Features -Rugged and Reliable. -High density cell design for extremely low RDS(ON). Maximum Ratings (at Ta=25°C unless otherwise noted) Drain-source voltage Continuous gate-source voltage Continuous drain current Power dissipation Operating temperature Storage temperature Units Symbol Parameter VDS VGS ID PD RΘJA TJ TSTG Value 50 ±20 0.22 0.35 357 150 -55 to +150 V V A W °C/W °C °C Thermal resistance from Junction to ambient Circuit diagram G D S Company reserves the right to improve product design , functions and reliability without notice. 1 : Gate 2 : Source 3 : Drain Dimensions in inches and (millimeter) SOT-23 3 1 2 0.118(3.00) 0.110(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.012(0.30) 0.020(0.50) RoHS Device |
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