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TIP147F Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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TIP147F Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 PNP Epitaxial Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage : TIP145F : TIP146F : TIP147F - 60 - 80 - 100 V V V VCEO Collector-Emitter Voltage : TIP145F : TIP146F : TIP147F - 60 - 80 - 100 V V V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage : TIP145F : TIP146F : TIP147F IC = - 30mA, IB = 0 - 60 - 80 - 100 V V V ICEO Collector Cut-off Current : TIP145F : TIP146F : TIP147F VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 - 2 - 2 - 2 mA mA mA ICBO Collector Cut-off Current : TIP145F : TIP146F : TIP147F VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 - 1 - 1 - 1 mA mA mA IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 - 2 mA hFE DC Current Gain VCE = - 4V, IC = - 5A VCE = - 4V, IC = - 10A 1000 500 VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA - 2 - 3 V V VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A - 3 V tD Delay Time VCC = - 30V, IC = - 5A IB1 = -20mA, IB2 = 20mA RL = 6Ω 0.15 µs tR Rise Time 0.55 µs tSTG Storage Time 2.5 µs tf Fall Time 2.5 µs TIP145F/146F/147F Monolithic Construction With Built In Base- Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140F/141F/142F Equivalent Circuit B E C R1 R2 R18k Ω ≅ R20.12k Ω ≅ TO-3PF 1.Base 2.Collector 3.Emitter 1 |
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