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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

High Energy Power FET

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS power FET is designed to withstand high

energy in the avalanche mode and switch efficiently. This new high

energy device also offers a gate–to–source zener diode designed

for 4 kV ESD protection (human body model).

• ESD Protected

• 4 kV Human Body Model

• 400 V Machine Model

• Avalanche Energy Capability

• Internal Source–To–Drain Diode Designed to Replace External

Zener Transient Suppressor–Absorbs High Energy in the

Avalanche Mode

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

60

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Gate–Source Voltage — Continuous

VGS

VGSM

±15

±20

Vdc

Vpk

Drain Current — Continuous

— Continuous @ 100

°C

— Single Pulse (tp ≤ 10 µs)

ID

ID

IDM

12

7.1

36

Adc

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25

°C

PD

45

0.36

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω)

EAS

72

mJ

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

2.78

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Order this document

by MTP12N06EZL/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MTP12N06EZL

TMOS POWER FET

12 AMPERES

60 VOLTS

RDS(on) = 0.180 OHM

®

CASE 221A–06, Style 5

TO–220AB

S

G

D

© Motorola, Inc. 1995