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TIP120 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. TIP120
Description  Medium Power Linear Switching Applications
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test : PW
≤300µs, Duty cycle ≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: TIP120
: TIP121
: TIP122
60
80
100
V
V
V
VCEO
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
60
80
100
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
8
A
IB
Base Current (DC)
120
mA
PC
Collector Dissipation (Ta=25°C)
2
W
Collector Dissipation (TC=25°C)
65
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
IC = 100mA, IB = 0
60
80
100
V
V
V
ICEO
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
0.5
0.5
0.5
mA
mA
mA
ICBO
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
0.2
0.2
0.2
mA
mA
mA
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
2
mA
hFE
* DC Current Gain
VCE = 3V,IC = 0.5A
VCE = 3V, IC = 3A
1000
1000
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
2.0
4.0
V
V
VBE(on)
* Base-Emitter ON Voltage
VCE = 3V, IC = 3A
2.5
V
Cob
Output Capacitance
VCB = 10V, IE = 0, f = 0.1MHz
200
pF
TIP120/121/122
Medium Power Linear Switching Applications
• Complementary to TIP125/126/127
Equivalent Circuit
B
E
C
R1
R2
R18k
R20.12k
1.Base
2.Collector
3.Emitter
1
TO-220




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