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MAX5901LCETT-T Datasheet(PDF) 5 Page - Maxim Integrated Products |
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MAX5901LCETT-T Datasheet(HTML) 5 Page - Maxim Integrated Products |
5 / 14 page -100V, SOT23/TDFN, Simple Swapper Hot-Swap Controllers _______________________________________________________________________________________ 5 Detailed Description The MAX5900/MAX5901 are integrated hot-swap con- troller ICs contained in 6-pin SOT23/TDFN packages. They allow a board to be safely hot plugged into a live backplane without causing a glitch on the power-sup- ply rail. They are well suited for -48V telecom power systems, allowing a cost-effective, simple, and com- pact design. The MAX5900/MAX5901 operate from -9V to -100V to cover the standard telecom voltage range, and to serve more generalized applications. These devices require only an external n-channel power MOS- FET to provide hot-swap control. Figure 1 shows a functional diagram of the MAX5900/MAX5901. The MAX5900/MAX5901 control an external n-channel power MOSFET placed in the negative power-supply pathway. When power is first applied, the MAX5900/ MAX5901 keep the MOSFET turned off. The MAX5900/ MAX5901 hold the MOSFET off indefinitely if ON/OFF is held low, if the supply voltage is below the undervolt- age lockout level, or if the die temperature exceeds +125°C. If none of these conditions exist for 300ms (typ), the MAX5900/MAX5901 begin to gradually turn on the MOSFET. During this turn-on phase, the MAX5900/MAX5901 slowly enhance the MOSFET, Figure 1. Functional Diagram VEE VEE ON/OFF GND MAX5900 MAX5901 GATE 34.5k Ω* 466k Ω* 1k Ω* 828k Ω* DRAIN *RELATIVE TOLERANCE ±1%, ABSOLUTE TOLERANCE ±20% TYPICAL. CONTROL LOGIC PGOOD (PGOOD) ( ) ARE FOR THE MAX5901 ONLY. VEE 3V N PIN MAX5900 MAX5901 NAME FUNCTION 11 VEE Negative Supply Voltage Input and External n-Channel MOSFET Source Connection 2 2 DRAIN Drain Sense Input for External n-Channel MOSFET. Connect DRAIN as close as possible to the MOSFET’s drain and use wide circuit traces to assure good thermal coupling between the MAX5900/MAX5901 and the MOSFET (see the Layout Guidelines section). 3 3 GATE Gate Drive Output for External n-Channel MOSFET 4 4 GND Ground Connection. 5— PGOOD Power-Good Output. PGOOD is an n-channel, open-drain, active-low output, referenced to VEE. — 5 PGOOD Power-Good Output. PGOOD is an n-channel, open-drain, active-high output, referenced to VEE. 6 6 ON/OFF ON/OFF Control Input. ON/OFF is referenced to VEE. Drive ON/OFF above 1.38V or leave unconnected to enable the device. Drive ON/OFF below 1V to disable the device. ON/OFF is also used to adjust the UVLO threshold. See the Under- voltage Lockout section in the Applications Information. Internally clamped to nominally 3V through a 1k Ω resistor (see Figure 1). — — EP Exposed Pad (TDFN only). Connect to VEE. Pin Description |
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