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CPDVR083V3U Datasheet(PDF) 2 Page - Comchip Technology |
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CPDVR083V3U Datasheet(HTML) 2 Page - Comchip Technology |
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2 / 5 page  Page 2 Comchip Technology CO., LTD. kV A W ±20 5 40 ESD IPP PPP °C -55 to +125 -55 to +125 TJ Operating temperature ESD per IEC 61000-4-2(Air) Peak pulse current ( tp = 8/20 us) Peak pulse power ( tp = 8/20 us) Parameter Symbol Value Unit Maximum Ratings (at TA=25°C unless otherwise noted) ESD per IEC 61000-4-2(Contact) Storage temperature TSTG ±15 °C V V 3.3 VPT VRWM Punch-through voltage Reverse stand-off voltage Parameter Conditions Symbol Min Typ Max Unit IPT = 2uA Electrical Characteristics (at TA=25°C unless otherwise noted) Snap-back voltage ISB = 50mA VSB Leakage current VR = 3.3V V IL 2.8 Clamping voltage IPP Any Channel Pin to Ground = 1 A, Tp=8/20us, VC V 0.5 0.05 3.5 5.5 uA IPP Any Channel Pin to Ground = 5 A, Tp=8/20us, VC V 8.0 IPPR Ground to Any Channel Pin = 1 A, Tp=8/20us, VCR V 2.4 Reverse clamping voltage Junction capacitance VR Any Channel Pin to Ground = 0 V, f = 1MHz Cj pF 30 VR = 3.3 V, f = 1MHz Any Channel Pin to Ground Cj pF 14 25 REV:B QW-BP027 SMD ESD Protection Diode |
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