PMZB670UPE

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© NXP B.V. 2012. All rights reserved.

Product data sheet

Rev. 3 — 23 March 2012

7 of 15

NXP Semiconductors

PMZB670UPE

20 V, single P-channel Trench MOSFET

(1) minimum values

(2) typical values

(3) maximum values

Fig 7.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 8.

Sub-threshold drain current as a function of

gate-source voltage

Fig 9.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 10. Drain-source on-state resistance as a function

of gate-source voltage; typical values

0-4

-3

-1

-2

017aaa363

-0.2

-0.3

-0.1

-0.4

-0.5

(A)

0.0

-4.5 V

-2.5 V

-2.0 V

-1.6 V

-1.4 V

017aaa364

0.0

-1.5

-1.0

-0.5

(A)

(1)

(2)

(3)

0.0

-0.5

-0.4

-0.2

-0.3

-0.1

017aaa365

2

1

3

4

(Ω)

0

(1)

(2)

(3)

(4)

(5)

0-5

-4

-2

-3

-1

017aaa366

2

1

3

4

(Ω)

0

(1)

(2)