Electronic Components Datasheet Search |
|
SSP4N60B Datasheet(PDF) 4 Page - Fairchild Semiconductor |
|
SSP4N60B Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2002 Fairchild Semiconductor Corporation Rev. B, June 2002 -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 2.0 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] 25 50 75 100 125 150 0 1 2 3 4 T C, Case Temperature [ ℃] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for SSP4N60B Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] Figure 9-2. Maximum Safe Operating Area for SSS4N60B |
Similar Part No. - SSP4N60B |
|
Similar Description - SSP4N60B |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |