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SSP10N60 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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SSP10N60 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page ©2003 Fairchild Semiconductor Corporation Rev. B, January 2003 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 0 2 4 6 8 10 T C, Case Temperature [ ℃] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 µs DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 5.0 A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※Notes: 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for SSP10N60B Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-2. Maximum Safe Operating Area for SSS10N60B |
Similar Part No. - SSP10N60 |
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Similar Description - SSP10N60 |
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