NSBC113EPDXV6T1G datasheet(10/15 Pages) ONSEMI

Part #	NSBC113EPDXV6T1G

Description	Dual Bias Resistor Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series

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TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1, NSVB144EPDXV6T1

NPN TRANSISTOR

Figure 22. VCE(sat) versus IC

02

4

6

8

10

100

10

1

0.1

0.01

0.001

Vin, INPUT VOLTAGE (VOLTS)

TA =-25°C

75

°C

25

°C

Figure 23. DC Current Gain

Figure 24. Output Capacitance

100

10

1

0.1

010

20

30

40

50

IC, COLLECTOR CURRENT (mA)

Figure 25. Output Current versus Input Voltage

1000

10

IC, COLLECTOR CURRENT (mA)

TA =75°C

25

°C

-25

°C

100

10

1

100

25

°C

75

°C

50

0

1020

3040

1

0.8

0.6

0.4

0.2

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 26. Input Voltage versus Output Current

0

20

40

50

10

1

0.1

0.01

IC, COLLECTOR CURRENT (mA)

25

°C

75

°C

VCE = 10 V

f = 1 MHz

IE = 0 V

TA = 25°C

VO = 5 V

VO = 0.2 V

IC/IB = 10

TA =-25°C

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NSBC113EPDXV6T1G Datasheet(PDF) 10 Page - ON Semiconductor

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