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BC847A-G Datasheet(PDF) 2 Page - Comchip Technology |
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BC847A-G Datasheet(HTML) 2 Page - Comchip Technology |
2 / 5 page Electrical Characteristics (BC846A-G Thru. BC848C-G, @TA= 25 °C unless otherwise specified) Comchip Technology CO., LTD. Page 2 REV:B Small Signal Transistor QW-BTR31 BC846-G Collector-Base Breakdown Voltage BC848-G BC846-G Collector-Emitter Breakdown Voltage BC848-G Emitter-Base Break Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage UNIT Symbol Parameter MIN VCBO VCEO VEBO ICBO VCE(sat) Cob 80 50 30 65 45 30 6 0.1 4.5 V V V µA V Test Conditions IC =10μA , IE=0 IC =10mA , IB=0 IE =10μA , IC=0 TYP MAX DC Current Gain hFE BC846A,BC847A,BC848A BC846B,BC847B,BC848B BC847C,BC848C VCE =5V , IC=2mA 110 200 420 220 450 800 IC =100mA , IB=5mA 0.5 Base-Emitter Saturation Voltage VBE(sat) V IC =100mA , IB=5mA 1.1 Transition Frequency fT MHZ 100 VCE=5V , IC=10mA f=100MHZ Collector Output Capacitance VCB =10V , f=1MHZ pF BC847-G BC847-G VCB=70V , IE=0 VCB=50V , IE=0 VCB=30V , IE=0 BC846-G BC848-G BC847-G Collector Cut-off Current ICEO 0.1 µA VCB=60V , IE=0 VCB=45V , IE=0 VCB=30V , IE=0 BC846-G BC848-G BC847-G IEBO 0.1 Emitter cut-off current VEB=5V , IC=0 µA |
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