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BZB84-B4V3 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BZB84-B4V3 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BZB84_SER_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 June 2009 8 of 14 NXP Semiconductors BZB84 series Dual Zener diodes [1] f = 1 MHz; VR =0V [2] tp = 100 µs; square wave; Tj =25 °C prior to surge Table 11. Characteristics per type; BZB84-C27 to BZB84-C75 Tj =25 °C unless otherwise specified. BZB84- Cxxx Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (µA) Temperature coefficient SZ (mV/K) Diode capacitance Cd (pF)[1] Non-repetitive peak reverse current IZSM (A)[2] IZ =2mA IZ = 0.5 mA IZ =2mA IZ =2mA Min Max Max Max Max VR (V) Min Max Max Max 27 25.1 28.9 300 80 0.05 18.9 21.4 25.3 50 1.00 30 28.0 32.0 300 80 0.05 21.0 24.4 29.4 50 1.00 33 31.0 35.0 325 80 0.05 23.1 27.4 33.4 45 0.90 36 34.0 38.0 350 90 0.05 25.2 30.4 37.4 45 0.80 39 37.0 41.0 350 130 0.05 27.3 33.4 41.2 45 0.70 43 40.0 46.0 375 150 0.05 30.1 37.6 46.6 40 0.60 47 44.0 50.0 375 170 0.05 32.9 42.0 51.8 40 0.50 51 48.0 54.0 400 180 0.05 35.7 46.6 57.2 40 0.40 56 52.0 60.0 425 200 0.05 39.2 52.2 63.8 40 0.30 62 58.0 66.0 450 215 0.05 43.4 58.8 71.6 35 0.30 68 64.0 72.0 475 240 0.05 47.6 65.6 79.8 35 0.25 75 70.0 79.0 500 255 0.05 52.5 73.4 88.6 35 0.20 (1) Tj =25 °C (prior to surge) (2) Tj = 150 °C (prior to surge) Tj =25 °C Fig 1. Per diode: Non-repetitive peak reverse power dissipation as a function of pulse duration; maximum values Fig 2. Per diode: Forward current as a function of forward voltage; typical values mbg801 103 1 tp (ms) PZSM (W) 10 102 10−1 10 1 (1) (2) VF (V) 0.6 1 0.8 mbg781 100 200 300 IF (mA) 0 |
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