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SPT7830SCU Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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SPT7830SCU Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 8 page  3 12/29/99 SPT7830 ELECTRICAL SPECIFICATIONS TA = +25 °C, VDD = +5.0 V, VIN = 0 to +3 V, fCLK = 35 MHz, fS = 2.5 MSPS, VREF+ = +3.0 V, VREF– = 0.0 V, unless otherwise specified. TEST TEST PARAMETERS CONDITIONS LEVEL MIN TYP MAX UNITS Dynamic Performance Effective Number of Bits fIN = 500 kHz IV 8.9 Bits fIN = 1 MHz IV 8.5 Bits Signal-to-Noise Ratio fIN = 500 kHz IV 56 dB fIN = 1 MHz IV 55 dB Harmonic Distortion fIN = 500 kHz IV 63 dB fIN = 1 MHz IV 58 dB Power Supply Requirements +VDD Supply Voltage IV 3 5.5 V +VDD Supply Current VDD = +3.0 V IV 5.4 7 mA VDD = +5.0 V VI 9 10 mA Power Dissipation3 VDD = +3.0 V IV 16 22 mW VDD = +5.0 V VI 45 50 mW 3 Excluding reference ladder. TEST LEVEL CODES All electrical characteristics are subject to the following conditions: All parameters having min/max specifications are guaranteed. The Test Level column indi- cates the specific device testing actually per- formed during production and Quality Assur- ance inspection. Any blank section in the data column indicates that the specification is not tested at the specified condition. TEST PROCEDURE 100% production tested at the specified temperature. 100% production tested at TA=+25 °C, and sample tested at the specified temperatures. QA sample tested only at the specified temperatures. Parameter is guaranteed (but not tested) by design and characterization data. Parameter is a typical value for information purposes only. 100% production tested at TA = +25 °C. Parameter is guaranteed over specified temperature range. TEST LEVEL I II III IV V VI |
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