MTE215N10E datasheet(3/8 Pages) MOTOROLA

Part #	MTE215N10E

Description	TMOS POWER FET 215 AMPERES 100 VOLTS RDS(on) = 0.0055 OHM

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Manufacturer	MOTOROLA [Motorola, Inc]

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MTE215N10E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage Current

versus Voltage

TJ = 25°C

VGS = 10 V

ID = 107.5 A

7 V

6 V

– 50

0

50

100

150

220

165

110

55

0

4

3.5

3

2

1

240

160

120

0

8

6

4

2

1

200

80

150

100

50

0

200

250

7

0

20

60

40

80

100

5 V

4 V

125

0.5

1.5

2.5

9 V

8 V

40

3

5

VDS ≥ 5 V

100

°C

25

°C

TJ = – 55°C

0.018

0.016

0.014

0.012

0.01

0.008

0.006

0.004

0

50

100

150

200

250

TJ = 100°C

25

°C

– 55

°C

0.016

0.014

0.012

0.01

0.008

0.006

VGS = 10 V

TJ = 25°C

VGS = 10 V

15 V

– 25

25

75

1.6

1.4

1.2

1

0.8

0.6

100000

10000

1000

100

10

1

VGS = 0 V

TJ = 125°C

100

°C

25

°C

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MTE215N10E Datasheet(PDF) 3 Page - Motorola, Inc

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