DS90CR215, DS90CR216

www.ti.com

SNLS129D – MARCH 1999 – REVISED APRIL 2013

Absolute Maximum Ratings

(1) (2)

−0.3V to +4V

CMOS/TTL Input Voltage

CMOS/TTL Output Voltage

LVDS Receiver Input Voltage

LVDS Driver Output Voltage

LVDS Output Short Circuit Duration

Continuous

Junction Temperature

+150°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature (Soldering, 4 sec.)

+260°C

Maximum Package Power Dissipation @ +25°C

DGG0048A (TSSOP)

DS90CR215

1.98 W

Package:

DS90CR216

1.89 W

Package Derating

DS90CR215

16 mW/°C above +25°C

DS90CR216

15 mW/°C above +25°C

ESD Rating (HBM, 1.5 k

Ω, 100 pF)

> 7 kV

(1)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(2)

“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to

imply that the device should be operated at these limits. “Electrical Characteristics” specify conditions for device operation.

Recommended Operating Conditions

Min

Nom

Max

Units

3.0

3.3

3.6

V

−40

+25

+85

°C

Receiver Input Range

0

2.4

V

Electrical Characteristics

Over recommended operating supply and temperature ranges unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

s

CMOS/TTL DC SPECIFICATIONS

High Level Input Voltage

2.0

V

Low Level Input Voltage

GND

0.8

V

High Level Output Voltage

2.7

3.3

V

Low Level Output Voltage

0.06

0.3

V

Input Clamp Voltage

−0.79

−1.5

V

Input Current

±5.1

±10

μA

2.5V or 0.4V

Output Short Circuit Current

-60

−120

mA

LVDS DRIVER DC SPECIFICATIONS

Differential Output Voltage

250

290

450

mV

35

mV

States

1.125

1.25

1.375

V

35

mV

States

Output Short Circuit Current

−3.5

−5

mA

Output TRI-STATE Current

PWR DWN = 0V,

±1

±10

μA

LVDS RECEIVER DC SPECIFICATIONS

(1)

Copyright © 1999–2013, Texas Instruments Incorporated

Submit Documentation Feedback

3

Product Folder Links: DS90CR215 DS90CR216