2SD2195 / 2SD1980 / 2SD1867

Transistors

Rev.B

1/3

Power Transistor (100V, 2A)

2SD2195 / 2SD1980 / 2SD1867

Features

1) Darlington connection for high DC current gain.

2) Built-in resistor between base and emitter.

3) Built-in damper diode.

4) Complements the 2SB1580 / 2SB1316.

Equivalent circuit

Ω

Ω

B

C

E

C

B

E

: Base

: Collector

: Emitter

Absolute maximum ratings (Ta=25

°C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector

power

dissipation

Junction temperature

Storage temperature

Parameter

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

100

100

6

2

2

1

1

10

150

−55 to +150

Unit

V

V

V

A(DC)

3

A(Pulse)

W

W

W(Tc

=25°C)

2SD2195

2SD1980

2SD1867

°C

°C

∗1

∗2

∗3

0.5

External dimensions (Unit : mm)

2SD2195

(3) Emitter

(2) Collector

(1) Base

EIAJ : SC-62

2SD1980

(3) Emitter

(2) Collector

(1) Base

ROHM : CPT3

EIAJ : SC-63

ROHM : MPT3

2SD1867

(2) Collector

(1) Emitter

ROHM : ATV

Taping specifications

(3) Base

0.45

1.05

0.5

(1)

0.65Max.

2.54

(2)

2.54

(3)

6.8

2.5

1.5

0.4

1.6

0.5

3.0

0.4

0.4

1.5

1.5

(3)

(2)

(1)

4.5

6.5

2.3

(2)

(3)

0.65

(1)

0.75

2.3

0.9

5.1

2.3

0.5

1.0

0.5