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S602ES Datasheet(PDF) 1 Page - Littelfuse |
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S602ES Datasheet(HTML) 1 Page - Littelfuse |
1 / 9 page 201 Revised: June 21, 2011 04:14 PM ©2011 Littelfuse, Inc Teccor® brand Thyristors Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. EV Series 1.5 Amp Sensitive SCRs Sx02xS Series A K G Sx02xS Series Description Applications Main Features Features New 1.5 Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR’s junctions are glass- passivated to ensure long term reliability and parametric stability. The Sx02xS EV series is specifically designed for Gas Ignition applications that require high pulse surge current capability. Symbol Value Unit I T(RMS) 1.5 A V DRM /VRRM 400 to 600 V I GT 200 µA Absolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) TO-92 T C = 65°C 1.5 A SOT-223 T L = 95°C I T(AV) Average on-state current TO-92 T C = 65°C 0.95 A SOT-223 T C = 95°C I TSM Non repetitive surge peak on-state current (Single cycle, T J initial = 25°C) TO-92 SOT-223 F = 50 Hz 12.5 A F = 60 Hz 15.0 I2t I2t Value for fusing t p = 10 ms F = 50 Hz 0.78 A2s t p = 8.3 ms F = 60 Hz 0.93 di/dt Critical rate of rise of on-state current IG = 10mA TO-92 SOT-223 T J = 125°C 50 A/μs I GM Peak gate current t p = 10 μs T J = 125°C 1.0 A P G(AV) Average gate power dissipation T J = 125°C 0.1 W T stg Storage junction temperature range -40 to 150 °C T J Operating junction temperature range -40 to 125 °C Schematic Symbol • RoHS compliant and Halogen-Free • Thru hole and surface mount packages • Surge capability > 15Amps • Blocking voltage (V DRM / VRRM) capability — up to 600V • High dv/dt noise immunity • Improved turn-off time (tq) < 35 μsec. • Sensitive gate for direct microprocessor interface HF |
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