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MCP6N11-010 Datasheet(PDF) 9 Page - Microchip Technology

Part # MCP6N11-010
Description  500 kHz, 800 關A Instrumentation Amplifier
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP6N11-010 Datasheet(HTML) 9 Page - Microchip Technology

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© 2011 Microchip Technology Inc.
DS25073A-page 9
MCP6N11
1.4
DC Test Circuits
1.4.1
INPUT OFFSET TEST CIRCUIT
Figure 1-6 is used for testing the INA’s input offset
errors and input voltage range (VE, VIVL and VIVH; see
Section 1.5.1 “Input Offset Related Errors” and
Section 1.5.2 “Input Offset Common Mode Non-
linearity”). U2 is part of a control loop that forces VOUT
to equal VCNT; U1 can be set to any bias point.
FIGURE 1-6:
Test Circuit for Common
Mode (Input Offset).
When MCP6N11 is in its normal range of operation, the
DC output voltages are (where VE is the sum of input
offset errors and gE is the gain error):
EQUATION 1-1:
Table 1-5 gives the recommended RF and RG values
for different GMIN options.
1.4.2
DIFFERENTIAL GAIN TEST CIRCUIT
Figure 1-7 is used for testing the INA’s differential gain
error, non-linearity and input voltage range (gE, INLDM,
VDML and VDMH; see Section 1.5.3 “Differential Gain
Error and Non-linearity”). RF and RG are 0.01% for
accurate gain error measurements.
FIGURE 1-7:
Test Circuit for Differential
Mode.
The output voltages are (where VE is the sum of input
offset errors and gE is the gain error):
EQUATION 1-2:
To keep VREF, VFG and VOUT within their ranges, set:
EQUATION 1-3:
Table 1-6 shows the recommended RF and RG. They
produce a 10 k
Ω load; VL can usually be left open.
TABLE 1-5:
SELECTING RF AND RG
GMIN
(V/V)
Nom.
RF
(
Ω)
Nom.
RG
(
Ω)
Nom.
GDM
(V/V)
Nom.
GDMVOS
(±V)
Max.
BW
(kHz)
Nom.
1
100k
499
201.4
0.60
2.5
2
0.40
5.0
5
100k
100
1001
0.85
2.5
10
0.50
5.0
100
0.35
35
RL
VCM
100 nF
VDD
2.2 µF
VREF
VL
12.7 k
Ω
VM
100 nF
CCNT
U1
MCP6N11
U2
MCP6H01
VCNT
63.4 k
Ω
RG
RF
RCNT
63.4 k
Ω
VOUT
10 nF
1k
Ω
1k
Ω
G
DM
1R
F RG
+
=
V
OUT
V
CNT
=
V
M
V
REF
G
DM 1gE
+
()V
E
+
=
TABLE 1-6:
SELECTING RF AND RG
GMIN
(V/V)
Nom.
RF
(
Ω)
Nom.
RG
(
Ω)
Nom.
GDM
(V/V)
Nom.
10
Open
1.000
2
4.99k
4.99k
2.000
5
8.06k
2.00k
5.030
10
9.09k
1.00k
10.09
100
10.0k
100
101.0
RL
6.34 k
Ω
1k
Ω
1k
Ω
VCM +VDM/2
+
100 nF
VOUT
RF
RG
VM
100 nF
VDD
2.2 µF
6.34 k
Ω
VREF
VFG
VL
VCM –VDM/2
0.01%
0.01%
U1
MCP6N11
G
DM
1R
F RG
+
=
V
M
V
OUT
V
REF
=
V
OUT
V
REF
G
DM 1gE
+
() V
DM
V
E
+
()
+
=
G
DM 1gE
+
() V
DM
V
E
+
()
=
V
REF
V
DD
G
DMVDM
() 2
=


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