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FSDM07652R Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSDM07652R Datasheet(HTML) 5 Page - Fairchild Semiconductor |
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5 / 20 page  FSDM0565R 5 Electrical Characteristics (Ta = 25 °C unless otherwise specified) Parameter Symbol Condition Min. Typ. Max. Unit Sense FET SECTION Drain source breakdown voltage BVDSS VGS = 0V, ID = 250 µA 650 - - V Zero gate voltage drain current IDSS VDS = 650V, VGS = 0V - - 50 µA VDS= 520V VGS = 0V, TC = 125 °C - - 200 µA Static drain source on resistance (1) RDS(ON) VGS = 10V, ID = 2.5A - 1.76 2.2 Ω Output capacitance COSS VGS = 0V, VDS = 25V, f = 1MHz -78 - pF Turn on delay time TD(ON) VDD= 325V, ID= 5A (MOSFET switching time is essentially independent of operating temperature) -22 - ns Rise time TR -52 - Turn off delay time TD(OFF) -95 - Fall time TF -50 - CONTROL SECTION Initial frequency FOSC VFB = 3V 60 66 72 kHz Voltage stability FSTABLE 13V ≤ Vcc ≤ 18V 0 1 3 % Temperature stability (2) ∆FOSC -25 °C ≤ Ta ≤ 85°C0 ±5±10 % Maximum duty cycle DMAX -75 80 85 % Minimum duty cycle DMIN -- - 0 % Start threshold voltage VSTART VFB=GND 11 12 13 V Stop threshold voltage VSTOP VFB=GND 78 9V Feedback source current IFB VFB=GND 0.7 0.9 1.1 mA Soft-start time TS Vfb=3 - 10 15 ms Leading Edge Blanking time TLEB - - 250 - ns BURST MODE SECTION Burst Mode Voltages (2) VBURH Vcc=14V - 0.7 - V VBURL Vcc=14V - 0.5 - V PROTECTION SECTION Peak current limit (4) IOVER VFB=5V, VCC=14V 2.0 2.25 2.5 A Over voltage protection VOVP -18 19 20 V Abnormal Over current protection current (3) IAOCP - 4.99 5.54 6.09 A Thermal shutdown temperature (2) TSD 130 145 160 °C Shutdown feedback voltage VSD VFB ≥ 5.5V 5.5 6.0 6.5 V |
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