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TLE2021CDRG4 Datasheet(PDF) 1 Page - Texas Instruments |
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TLE2021CDRG4 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 77 page TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Supply Current . . . 300 μA Max D High Unity-Gain Bandwidth...2 MHz Typ D High Slew Rate . . . 0.45 V/μs Min D Supply-Current Change Over Military Temp Range ...10 μA Typ at VCC ± = ± 15 V D Specified for Both 5-V Single-Supply and ±15-V Operation D Phase-Reversal Protection D High Open-Loop Gain... 6.5 V/μV (136 dB) Typ D Low Offset Voltage . . . 100 μV Max D Offset Voltage Drift With Time 0.005 μV/mo Typ D Low Input Bias Current . . . 50 nA Max D Low Noise Voltage . . . 19 nV/√Hz Typ description The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth. The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices. The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use. This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail. A variety of available options includes small-outline and chip-carrier versions for high-density systems applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of −55°C to 125°C. Copyright © 2010, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. |
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