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CBT3253APW Datasheet(PDF) 4 Page - NXP Semiconductors |
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CBT3253APW Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page CBT3253A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 — 24 September 2013 4 of 15 NXP Semiconductors CBT3253A Dual 1-of-4 FET multiplexer/demultiplexer 6. Functional description 7. Limiting values [1] The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. [2] For SO16 package: Ptot derates linearly with 8 mW/K above 70 C. [3] For SSOP16 and TSSOP16 package: Ptot derates linearly with 5.5 mW/K above 70 C. 8. Recommended operating conditions Table 3. Function selection H = HIGH voltage level; L = LOW voltage level; X = Don’t care. Inputs Switch 1OE 2OE S1 S0 X H X X disconnect 1A and 2A H X X X disconnect 1A and 2A L L L L 1A to 1B1 and 2A to 2B1 L L L H 1A to 1B2 and 2A to 2B2 L L H L 1A to 1B3 and 2A to 2B3 L L H H 1A to 1B4 and 2A to 2B4 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +7.0 V VI input voltage [1] 0.5 +7.0 V ISW switch current continuous current through each switch - 128 mA IIK input clamping current VI <0V 50 mA Tstg storage temperature 65 +150 C Ptot total power dissipation Tamb = 40 C to +85 C SO16 package [2] -500 mW SSOP16 package [3] -500 mW TSSOP16 package [3] -500 mW Table 5. Operating conditions All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Symbol Parameter Conditions Min Max Unit VCC supply voltage 4.5 5.5 V VIH HIGH-level input voltage 2.0 - V VIL LOW-level input voltage - 0.8 V Tamb ambient temperature operating in free-air 40 +85 C |
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