0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1

2

R

(t) = r(t) * R

R

= 125°C/W

θJA

θJA

θJA

T - T

= P * R

(t)

A

J

P(pk)

0

2

4

6

8

10

0

7

14

21

28

35

24V

48V

0

500

1000

1500

2000

2500

0

6

12

18

24

30

0.01

0.1

1

10

100

0.1

1

10

100

DC

10s

1s

100ms

10ms

1ms

100

µs

0

10

20

30

40

50

0.001

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

T =25

Si4450DY Rev A

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal Characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.