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SIHFR420 Datasheet(PDF) 3 Page - Kersemi Electronic Co., Ltd.

Part # SIHFR420
Description  Dynamic dV/dt Rating
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Manufacturer  KERSEMI [Kersemi Electronic Co., Ltd.]
Direct Link  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

SIHFR420 Datasheet(HTML) 3 Page - Kersemi Electronic Co., Ltd.

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3
IRFR420, IRFU420, SiHFR420, SiHFU420
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 -Typical Output Characteristics, TC = 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
2.4
A
Pulsed Diode Forward Currenta
ISM
--
8.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = 2.4 A, VGS = 0 Vb
--
1.6
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/µsb
-
260
520
ns
Body Diode Reverse Recovery Charge
Qrr
-
0.70
1.4
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
S
D
G
www.kersemi.com


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