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SIHFR120TL-E3 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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SIHFR120TL-E3 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 7 page  1 IRFR420, IRFU420, SiHFR420, SiHFU420 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR420/SiHFR420) • Straight Lead (IRFU420/SiHFU420) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 500 RDS(on) (Ω)VGS = 10 V 3.0 Qg (Max.) (nC) 19 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single N-Channel MOSFET G D S DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR420PbF IRFR420TRPbFa IRFR120TRLPbFa IRFU420PbF SiHFR420-E3 SiHFR420T-E3a SiHFR120TL-E3a SiHFU420-E3 SnPb IRFR420 IRFR420TRa IRFR120TRLa IRFU420 SiHFR420 SiHFR420Ta SiHFR120TLa SiHFU420 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 2.4 A TC = 100 °C 1.5 Pulsed Drain Currenta IDM 8.0 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 400 mJ Repetitive Avalanche Currenta IAR 2.4 A Repetitive Avalanche Energya EAR 4.2 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns www.kersemi.com |
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