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SGW10N60RUF Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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SGW10N60RUF Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 7 page SGW10N60RUF Rev. A1 ©2002 Fairchild Semiconductor Corporation Fig 14. Gate Charge Characteristics Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Fig 17. Transient Thermal Impedance of IGBT Fig 13. Switching Loss vs. Collector Current 010 20 30 0 3 6 9 12 15 V CC = 100 V 200 V 300 V Common Emitter R L = 30 Ω T C = 25 ℃ Gate Charge, Q g [ nC ] 1 10 100 1000 1 10 Safe Operating Area V GE = 20V, T C = 100℃ 50 Collector-Emitter Voltage, V CE [V] 510 15 20 100 1000 Eon Eoff Common Emitter V GE = ± 15V, R G = 20Ω T C = 25℃ ━━ T C = 125 ℃ ------ Collector Current, I C [A] 0.1 1 10 100 1000 0.1 1 10 100 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature I C MAX. (Continuous) I C MAX. (Pulsed) DC Operation 1㎳ 100us 50us Collector-Emitter Voltage, V CE [V] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 10 0.5 0.2 0.1 0.05 0.02 0.01 single pulse Rectangular Pulse Duration [sec] Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + T C |
Similar Part No. - SGW10N60RUF |
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