SGW10N60RUF datasheet(5/7 Pages) FAIRCHILD

Part #	SGW10N60RUF

Description	Short Circuit Rated IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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SGW10N60RUF Rev. A1

Fig 14. Gate Charge Characteristics

Fig 15. SOA Characteristics

Fig 16. Turn-Off SOA Characteristics

Fig 17. Transient Thermal Impedance of IGBT

Fig 13. Switching Loss vs. Collector Current

010

20

30

0

3

6

9

12

15

V

CC = 100 V

200 V

300 V

Common Emitter

R

L = 30 Ω

T

C = 25

℃

Gate Charge, Q

g [ nC ]

1

10

100

1000

1

10

Safe Operating Area

V

GE

= 20V, T

C

= 100℃

50

Collector-Emitter Voltage, V

CE [V]

510

15

20

100

1000

Eon

Eoff

Common Emitter

V

GE =

± 15V, R

G = 20Ω

T

C =

25℃ ━━

T

C = 125

℃ ------

Collector Current, I

C

[A]

0.1

1

10

100

1000

0.1

1

10

100

Single Nonrepetitive

Pulse T

C

= 25℃

Curves must be derated

linearly with increase

in temperature

I

C MAX. (Continuous)

I

C MAX. (Pulsed)

DC Operation

1㎳

100us

50us

Collector-Emitter Voltage, V

CE [V]

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01

0.1

1

10

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

Rectangular Pulse Duration [sec]

Pdm

t1

t2

Duty factor D = t1 / t2

Peak Tj = Pdm

× Zthjc + T

C

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SGW10N60RUF Datasheet(PDF) 5 Page - Fairchild Semiconductor

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