Power Module

2

Revised: July 26, 2013 04:44 PM

©2013 Littelfuse, Inc

Specifications are subject to change without notice.

Please refer to http://www.littelfuse.com for current information.

MG06400D-BN4MM

600V IGBT Family

Symbol

Parameters

Test Conditions

Min

Typ

Max

Unit

IGBT

V

GE(th)

Gate - Emitter Threshold Voltage

V

4.9

5.8

6.5

V

V

CE(sat)

Collector - Emitter

Saturation Voltage

I

1.45

V

I

1.6

V

I

CES

Collector Leakage Current

V

1.0

mA

V

5

mA

I

GES

Gate Leakage Current

V

-400

400

μA

R

Gint

Intergrated Gate Resistor

1.0

Ω

Q

ge

Gate Charge

V

4.3

μC

C

ies

Input Capacitance

V

26

nF

C

res

Reverse Transfer Capacitance

0.76

nF

t

d(on)

Turn - on Delay Time

V

I

R

V

Inductive Load

T

110

ns

T

120

ns

t

r

Rise Time

T

50

ns

T

60

ns

t

d(off)

Turn - off Delay Time

T

490

ns

T

520

ns

t

f

Fall Time

T

60

ns

T

70

ns

E

on

Turn - on Energy

T

2.1

mJ

T

3.2

mJ

E

off

Turn - off Energy

T

12

mJ

T

15

mJ

I

SC

Short Circuit Current

t

2000

A

T

R

thJC

Junction-to-Case Thermal

Resistance (Per IGBT)

0.12

K/W

Diode

V

F

Forward Voltage

I

1.55

V

I

1.50

V

I

RRM

Max. Reverse Recovery Current

I

330

A

Q

rr

Reverse Recovery Charge

d

29.0

μC

E

rec

Reverse Recovery Energy

T

7.4

mJ

R

thJCD

Junction-to-Case Thermal

Resistance (Per Diode)

0.22

K/W