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MG06400D-BN4MM Datasheet(PDF) 2 Page - Littelfuse |
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MG06400D-BN4MM Datasheet(HTML) 2 Page - Littelfuse |
2 / 5 page Power Module 2 Revised: July 26, 2013 04:44 PM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. MG06400D-BN4MM 600V IGBT Family Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate - Emitter Threshold Voltage V CE=VGE, IC=6.4mA 4.9 5.8 6.5 V V CE(sat) Collector - Emitter Saturation Voltage I C=400A, VGE=15V, TVj=25°C 1.45 V I C=400A, VGE=15V, TVj=125°C 1.6 V I CES Collector Leakage Current V CE=600V, VGE=0V, TVj=25°C 1.0 mA V CE=600V, VGE=0V, TVj=125°C 5 mA I GES Gate Leakage Current V CE=0V,VGE=±15V, TVj=125°C -400 400 μA R Gint Intergrated Gate Resistor 1.0 Ω Q ge Gate Charge V CE=300V, IC=400A , VGE=±15V 4.3 μC C ies Input Capacitance V CE=25V, VGE=0V, f =1MHz 26 nF C res Reverse Transfer Capacitance 0.76 nF t d(on) Turn - on Delay Time V CC=300V I C=400A R G =1.5Ω V GE=±15V Inductive Load T Vj =25°C 110 ns T Vj =125°C 120 ns t r Rise Time T Vj =25°C 50 ns T Vj =125°C 60 ns t d(off) Turn - off Delay Time T Vj =25°C 490 ns T Vj =125°C 520 ns t f Fall Time T Vj =25°C 60 ns T Vj =125°C 70 ns E on Turn - on Energy T Vj =25°C 2.1 mJ T Vj =125°C 3.2 mJ E off Turn - off Energy T Vj =25°C 12 mJ T Vj =125°C 15 mJ I SC Short Circuit Current t psc≤6μS , VGE=15V 2000 A T Vj=125°C,VCC=360V R thJC Junction-to-Case Thermal Resistance (Per IGBT) 0.12 K/W Diode V F Forward Voltage I F=400A , VGE=0V, TVj =25°C 1.55 V I F=400A , VGE=0V, TVj =125°C 1.50 V I RRM Max. Reverse Recovery Current I F=400A , VR=300V 330 A Q rr Reverse Recovery Charge d iF/dt=-7000A/μs 29.0 μC E rec Reverse Recovery Energy T Vj=125°C 7.4 mJ R thJCD Junction-to-Case Thermal Resistance (Per Diode) 0.22 K/W Electrical and Thermal Specifications (T C = 25°C, unless otherwise specified) |
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