A5191HRT

http://onsemi.com

3

Symbol

Parameter

Min

Typ

Max

Units

Input Voltage, Low

3.0 – 5.5 V

V

Input Voltage, High

3.0 – 5.5 V

V

3.0 – 5.5 V

0.4

V

3.0 – 5.5 V

2.4

V

Input Capacitance of:

Analog Input

RXA

Digital Input

2.9

25

3.5

pF

pF

pF

Input Leakage Current

±500

nA

Output Leakage Current

±10

mA

Power Supply Current

(RBIAS = 500 kW, AREF = 1.235 V)

3.3 V

5.0 V

150

150

330

300

450

600

mA

mA

Dynamic Digital Current

5.0 V

25

200

mA

Analog Reference

3.3 V

5.0 V

1.2

1.235

2.5

2.6

V

V

(Note 3)

Carrier Detect Reference (AREF – 0.08 V)

3.3 V

5.0 V

1.15

2.42

V

Comparator Bias Current

(RBIAS = 500 kW, AREF = 1.235 V)

2.5

mA

3. The HART specification requires carrier detect (CD) to be active between 80 and 120 mVp−p. Setting CDREF at AREF − 0.08 VDC will set

the carrier detect to a nominal 100 mVp−p.

Pin Name

Description

Min

Typ

Max

Units

RxA

Receive analog input

Leakage current

Frequency – mark (logic 1)

Frequency – space (logic 0)

1190

2180

1200

2200

±150

1210

2220

nA

Hz

Hz

RxAF

Output of the high−pass filter

Slew rate

Gain bandwidth (GBW)

Voltage range

150

0.15

0.025

V/ms

kHz

V

RxAFI

Carrier detect and receive filter input

Leakage current

±500

nA

TxA

Modulator output

Frequency – mark (logic 1)

Frequency – space (logic 0)

Amplitude (AREF 1.235 V)

Slew Rate − mark (logic 1)

Slew Rate − space (logic 0)

Loading (AREF = 1.235 V)

30

1196.9

2194.3

500

1860

3300

Hz

Hz

mV

V/s

V/s

kW

RxD

Receive digital output

Rise/fall time

20

ns

CD

Carrier detect output

Rise/fall time

20

ns

4. The modular output frequencies are proportional to the input clock frequency (460.8 kHz).