2N5190G datasheet(4/6 Pages) ONSEMI

Part #	2N5190G

Description	Silicon NPN Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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2N5190G, 2N5191G, 2N5192G

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4

103

-0.4

Figure 5. Collector Cut−Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

10-1

10- 2

10- 3

-0.3 -0.2 -0.1

0

+0.1 +0.2 +0.3

+0.4 +0.5

+0.6

VCE = 30 V

TJ = 150°C

100

°C

25

°C

REVERSE

FORWARD

ICES

107

20

Figure 6. Effects of Base−Emitter Resistance

TJ, JUNCTION TEMPERATURE (°C)

40

60

80

100

120

140

160

106

105

104

103

102

VCE = 30 V

IC = 10 x ICES

IC = 2 x ICES

IC ≈ ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 5)

Figure 7. Switching Time Equivalent Test Circuit

APPROX

+11 V

TURN-ON PULSE

Vin

t1

VEB(off)

TURN-OFF PULSE

Vin

t3

t2

APPROX

+11 V

VCC

SCOPE

RB

Cjd <<Ceb

-4.0 V

t1 ≤ 7.0 ns

100 < t2 < 500 ms

t3 < 15 ns

DUTY CYCLE

≈ 2.0%

APPROX -9.0 V

Vin

RC

0

RB and RC varied

to obtain desired

current levels

300

0.1

VR, REVERSE VOLTAGE (VOLTS)

0.2 0.3

0.5

1.0

3.0 5.0

20

40

200

100

70

50

30

TJ = +25°C

Figure 8. Capacitance

2.0

10

30

Ceb

Ccb

2.0

0.05

Figure 9. Turn−On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02

0.07 0.1

0.2

0.3

1.0

2.0

4.0

tr @ VCC = 30 V

IC/IB = 10

TJ = 25°C

0.03

0.5

0.05

0.07

0.7

3.0

tr @ VCC = 10 V

td @ VEB(off) = 2.0 V

2.0

0.05

Figure 10. Turn−Off Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02

0.07 0.1

0.2

0.3

1.0

2.0

4.0

tf @ VCC = 30 V

IB1 = IB2

IC/IB = 10

ts′ = ts - 1/8 tf

TJ = 25°C

0.03

0.5

0.05

0.07

0.7

3.0

tf @ VCC = 10 V

ts′

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