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2N5191G Datasheet(PDF) 5 Page - ON Semiconductor

Part # 2N5191G
Description  Silicon NPN Power Transistors
Download  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5191G Datasheet(HTML) 5 Page - ON Semiconductor

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2N5190G, 2N5191G, 2N5192G
http://onsemi.com
5
10
1.0
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0
5.0
10
20
50
100
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT AT TC = 25°C
BONDING WIRE LIMIT
0.2
CURVES APPLY BELOW RATED VCEO
TJ = 150°C
dc
1.0ms
100
ms
2N5191
2N5192
5.0ms
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
Figure 12. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3 0.5
1.0
2.0
3.0 5.0
10
20
50
100
200
1000
500
qJC(max) = 3.12°C/W — 2N5190-92
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP
PP
PP
t1
1/f
DUTY CYCLE, D = t1 f -
t1
tP
PEAK PULSE POWER = PP
Figure A
A train of periodical power pulses can be represented by
the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find
qJC(t), multiply the value obtained from Figure 12
by the steady state value
qJC.
Example:
The 2N5190 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in function temperature is therefore:
DT = r(t) × PP × qJC = 0.27 × 50 × 3.12 = 42.2_C


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