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DS125BR401SQE Datasheet(PDF) 6 Page - Texas Instruments |
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DS125BR401SQE Datasheet(HTML) 6 Page - Texas Instruments |
6 / 52 page DS125BR401 SNLS419C – JULY 2012 – REVISED APRIL 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) Supply Voltage (VDD - 2.5V) -0.5V to +2.75V Supply Voltage (VIN - 3.3V) -0.5V to +4.0V LVCMOS Input/Output Voltage -0.5V to +4.0V CML Input Voltage -0.5V to (VDD+0.5) CML Input Current -30 to +30 mA Junction Temperature 125°C Storage Temperature -40°C to +125°C Lead Temperature Range Soldering (4 sec.) +260°C Derate NJY Package 52.6mW/°C above +25°C HBM, STD - JESD22-A114F 5 kV ESD Rating MM, STD - JESD22-A115-A 150 V CDM, STD - JESD22-C101-D 1000 V θJC 11.5°C/W Thermal Resistance θJA, No Airflow, 4 layer JEDEC 19.1°C/W For soldering specifications: See application note SNOA549. (1) “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute Maximum Numbers are ensured for a junction temperature range of -40°C to +125°C. Models are validated to Maximum Operating Voltages only. Recommended Operating Conditions Min Typ Max Unit Supply Voltage (2.5V mode) 2.375 2.5 2.625 V Supply Voltage (3.3V mode) 3.0 3.3 3.6 V Ambient Temperature -40 25 +85 °C SMBus (SDA, SCL) 3.6 V Supply Noise up to 50 MHz(1) 100 mVp-p (1) Allowed supply noise (mVp-p sine wave) under typical conditions. Electrical Characteristics Parameter Test Conditions Min Typ Max Unit Power VDD = 2.5 V supply, EQ Enabled, 500 700 mW VOD = 1.0 Vp-p, RXDET = 1, PWDN = 0 PD Power Dissipation VIN = 3.3 V supply, EQ Enabled, 660 900 mW VOD = 1.0 Vp-p, RXDET = 1, PWDN = 0 LVCMOS / LVTTL DC Specifications Vih High Level Input Voltage 2.0 3.6 V Vil Low Level Input Voltage 0 0.8 V Voh High Level Output Voltage Ioh = −4mA 2.0 V (ALL_DONE pin) Vol Low Level Output Voltage Iol = 4mA 0.4 V (ALL_DONE pin) 6 Submit Documentation Feedback Copyright © 2012–2013, Texas Instruments Incorporated Product Folder Links: DS125BR401 |
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