DS125BR401

SNLS419C – JULY 2012 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)

Supply Voltage (VDD - 2.5V)

-0.5V to +2.75V

Supply Voltage (VIN - 3.3V)

-0.5V to +4.0V

LVCMOS Input/Output Voltage

-0.5V to +4.0V

CML Input Voltage

-0.5V to (VDD+0.5)

CML Input Current

-30 to +30 mA

Junction Temperature

125°C

Storage Temperature

-40°C to +125°C

Lead Temperature Range Soldering (4 sec.)

+260°C

Derate NJY Package

52.6mW/°C above +25°C

HBM, STD - JESD22-A114F

5 kV

ESD Rating

MM, STD - JESD22-A115-A

150 V

CDM, STD - JESD22-C101-D

1000 V

11.5°C/W

Thermal Resistance

19.1°C/W

For soldering specifications: See application note SNOA549.

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or

other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating

Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Absolute

Maximum Numbers are ensured for a junction temperature range of -40°C to +125°C. Models are validated to Maximum Operating

Voltages only.

Recommended Operating Conditions

Min

Typ

Max

Unit

Supply Voltage (2.5V mode)

2.375

2.5

2.625

V

Supply Voltage (3.3V mode)

3.0

3.3

3.6

V

Ambient Temperature

-40

25

+85

°C

SMBus (SDA, SCL)

3.6

V

100

mVp-p

(1)

Allowed supply noise (mVp-p sine wave) under typical conditions.

Electrical Characteristics

Parameter

Test Conditions

Min

Typ

Max

Unit

Power

VDD = 2.5 V supply,

EQ Enabled,

500

700

mW

VOD = 1.0 Vp-p,

RXDET = 1, PWDN = 0

PD

Power Dissipation

VIN = 3.3 V supply,

EQ Enabled,

660

900

mW

VOD = 1.0 Vp-p,

RXDET = 1, PWDN = 0

LVCMOS / LVTTL DC Specifications

High Level Input Voltage

2.0

3.6

V

Low Level Input Voltage

0

0.8

V

High Level Output Voltage

2.0

V

(ALL_DONE pin)

Low Level Output Voltage

0.4

V

(ALL_DONE pin)

6

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