 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AT45DB021E-SHN-T Datasheet(PDF) 11 Page - List of Unclassifed Manufacturers |
|
||||||||||||||||||||||||||||||
AT45DB021E-SHN-T Datasheet(HTML) 11 Page - List of Unclassifed Manufacturers |
|
|
11 / 68 page  11 AT45DB021E 8789E–DFLASH–10/2013 The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register. 6.4 Main Memory Page Program through Buffer with Built-In Erase The Main Memory Page Program through Buffer with Built-In Erase command combines the Buffer Write and Buffer to Main Memory Page Program with Built-In Erase operations into a single operation to help simplify application firmware development. With the Main Memory Page Program through Buffer with Built-In Erase command, data is first clocked into the Buffer, the addressed page in memory is then automatically erased, and then the contents of the Buffer are programmed into the just-erased main memory page. To perform a Main Memory Page Program through Buffer using the standard DataFlash page size (264 bytes), an opcode of 82h must first be clocked into the device followed by three address bytes comprised of five dummy bits, 10 page address bits (PA9 - PA0) that specify the page in the main memory to be written, and nine buffer address bits (BFA8 - BFA0) that select the first byte in the Buffer to be written. To perform a Main Memory Page Program through Buffer using the binary page size (256 bytes), an opcode of 82h must first be clocked into the device followed by three address bytes comprised of six dummy bits, 10 page address bits (A17 - A8) that specify the page in the main memory to be written, and eight address bits (A7 - A0) that selects the first byte in the Buffer to be written. After all address bytes have been clocked in, the device will take data from the input pin (SI) and store it in the Buffer. If the end of the Buffer is reached, the device will wrap around back to the beginning of the Buffer. When there is a low-to-high transition on the CS pin, the device will first erase the selected page in main memory (the erased state is a Logic 1) and then program the data stored in the Buffer into that main memory page. Both the erasing and the programming of the page are internally self-timed and should take place in a maximum time of tEP. During this time, the RDY/BUSY bit in the Status Register will indicate that the device is busy. The device also incorporates intelligent erase and programming algorithms that can detect when a byte location fails to erase or program properly. If an erase or program error arises, it will be indicated by the EPE bit in the Status Register. 6.5 Main Memory Byte/Page Program through Buffer without Built-In Erase The Main Memory Byte/Page Program through the Buffer without Built-In Erase combines both the Buffer Write and Buffer to Main Memory Program without Built-In Erase operations to allow any number of bytes (1 to 256/264 bytes) to be programmed directly into previously erased locations in the main memory array. With the Main Memory Byte/Page Program through Buffer without Built-In Erase command, data is first clocked into Buffer, and then only the bytes clocked into the Buffer are programmed into the pre-erased byte locations in main memory. Multiple bytes up to the page size can be entered with one command sequence. To perform a Main Memory Byte/Page Program through the Buffer using the standard DataFlash page size (264 bytes), an opcode of 02h must first be clocked into the device followed by three address bytes comprised of five dummy bits, 10 page address bits (PA9 - PA0) that specify the page in the main memory to be written, and nine buffer address bits (BFA8 - BFA0) that select the first byte in the Buffer to be written. After all address bytes are clocked in, the device will take data from the input pin (SI) and store it in the Buffer. Any number of bytes (1 to 264) can be entered. If the end of the Buffer is reached, then the device will wrap around back to the beginning of the Buffer. To perform a Main Memory Byte/Page Program through the Buffer using the binary page size (256 bytes), an opcode of 02h must first be clocked into the device followed by three address bytes comprised of six dummy bits, 10 page address bits (PA9 - PA0) that specify the page in the main memory to be written, and eight address bits (A7 - A0) that selects the first byte in the Buffer to be written. After all address bytes are clocked in, the device will take data from the input pin (SI) and store it in the Buffer. Any number of bytes (1 to 256) can be entered. If the end of the Buffer is reached, then the device will wrap around back to the beginning of the Buffer. When using the binary page size, the page and buffer address bits correspond to an 18-bit logical address (A17-A0) in the main memory. After all data bytes have been clocked into the device, a low-to-high transition on the CS pin will start the program operation in which the device will program the data stored in the Buffer into the main memory array. Only the data bytes that were clocked into the device will be programmed into the main memory. |
Similar Part No. - AT45DB021E-SHN-T |
|
Similar Description - AT45DB021E-SHN-T |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
