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CM400E2G-130H Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM400E2G-130H Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 8 page  MITSUBISHI HVIGBT MODULES CM400E2G-130H HIGH POWER SWITCHING USE 3 th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1048-B 2 of 8 MAXIMUM RATINGS Symbol Item Conditions Ratings Unit Tj = -40 °C 5800 Tj = +25 °C 6300 VCES Collector-emitter voltage VGE = 0 V Tj = +125 °C 6500 V VGES Gate-emitter voltage VCE = 0V, Tj = 25°C ± 20 V IC DC, Tc = 80°C 400 A ICM Collector current Pulse (Note 1) 800 A IE DC 400 A IEM Emitter current (Note 2) Pulse (Note 1) 800 A Pc Maximum power dissipation (Note 3) Tc = 25°C, IGBT part 5900 W Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 10200 V Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC 5100 V Tj Junction temperature −40 ~ +150 °C Top Operating temperature −40 ~ +125 °C Tstg Storage temperature −40 ~ +125 °C tpsc Maximum short circuit pulse width VCC =4500V, VCE ≤ VCES, VGE =15V, Tj =125°C 10 µs ELECTRICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — — 7 ICES Collector cutoff current VCE = VCES, VGE = 0V Tj = 125°C — 20 60 mA VGE(th) Gate-emitter threshold voltage VCE = 10 V, IC = 40 mA, Tj = 25°C 5.0 6.0 7.0 V IGES Gate leakage current VGE = VGES, VCE = 0V, Tj = 25°C −0.5 — 0.5 µA Cies Input capacitance — 82.0 — nF Coes Output capacitance — 5.0 — nF Cres Reverse transfer capacitance VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C — 1.4 — nF Qg Total gate charge VCC = 3600 V, IC = 400 A VGE = ±15 V, Tj = 25 °C — 6.6 — µC Tj = 25°C — 4.5 — VCE(sat) Collector-emitter saturation voltage IC = 400 A (Note 4) VGE = 15 V Tj = 125°C — 4.6 — V td(on) Turn-on delay time — 1.2 — µs tr Turn-on rise time — 0.35 — µs Eon(10%) Turn-on switching energy (Note 5) VCC = 3600 V, IC = 400 A VGE = ±15 V, RG(on) = 15 Ω Tj = 125 °C, Ls = 170 nH t(IGBT_off) = 60 µs (Note 6), Inductive load — 3.0 — J/P td(off) Turn-off delay time — 8.2 — µs tf Turn-off fall time — 0.5 — µs tf2 Turn-off fall time — 3.1 — µs Eoff(10%) Turn-off switching energy (Note 5) VCC = 3600 V, IC = 400 A VGE = ±15 V, RG(off) = 50 Ω Tj = 125 °C, Ls = 170 nH Inductive load — 2.7 — J/P Tj = 25 °C — 4.0 — VEC Emitter-collector voltage (Note 2) IE = 400 A (Note 4) VGE = 0 V Tj = 125 °C — 3.6 — V trr Reverse recovery time (Note 2) — 1.0 — µs trr2 Reverse recovery time (Note 2) — 2.4 — µs Qrr Reverse recovery charge (Note 2) — 740 — µC Erec(10%) Reverse recovery energy (Note 2), (Note 5) VCC = 3600 V, IE = 400 A VGE = ±15 V, RG(on) = 15 Ω Tj = 125 °C, Ls = 170 nH t(IGBT_off) = 60 µs (Note 6), Inductive load — 1.4 — J/P |
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