XP162A12A6PR_12 datasheet(2/5 Pages) TOREX

Part #	XP162A12A6PR

Description	Power MOSFET

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Manufacturer	TOREX [Torex Semiconductor]

Direct Link	http://www.torex.co.jp

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XP162A12A6PR-G

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Drain Cut-Off Current

Idss

Vds= -20V, Vgs= 0V

-

-10

μA

Gate-Source Leak Current

Igss

Vgs= ±12V, Vds= 0V

-

±10

μA

Gate-Source Cut-Off Voltage

Vgs(off)

Id= -1mA, Vds= -10V

-0.5

-

-1.2

V

Id= -1.5A, Vgs= -4.5V

-

0.13

0.17

Ω

Drain-Source On-State Resistance*1

Rds(on)

Id= -1.5A, Vgs= -2.5V

-

0.22

0.30

Ω

Forward Transfer Admittance*1

| Yfs |

Id= -1.5A, Vds= -10V

-

4

-

S

Body Drain Diode

Forward Voltage

Vf

If= -2.5A, Vgs= 0V

-

-0.85

-1.1

V

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Input Capacitance

Ciss

-

310

-

pF

Output Capacitance

Coss

-

200

-

pF

Feedback Capacitance

Crss

Vds= -10V, Vgs=0V

f= 1MHz

-

90

-

pF

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Turn-On Delay Time

td (on)

-

5

-

ns

Rise Time

tr

-

15

-

ns

Turn-Off Delay Time

td (off)

-

55

-

ns

Fall Time

tf

Vgs= -5V, Id= -1.5A

Vdd= -10V

-

55

-

ns

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNITS

Thermal Resistance

(Channel-Ambience)

Rth (ch-a)

Implement on a ceramic PCB

-

62.5

-

℃/W

■ELECTRICAL CHARACTERISTICS

DC Characteristics

Ta = 25℃

*1 Effective during pulse test.

Ta = 25℃

Switching Characteristics

Thermal Characteristics

Dynamic Characteristics

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