PSMN3R0-60BS

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Product data sheet

Rev. 1 — 22 March 2012

8 of 15

NXP Semiconductors

PSMN3R0-60BS

N-channel 60 V 3.2 m

Ω standard level MOSFET in D2PAK

Fig 9.

Input and reverse transfer capacitances as a

function of gate-source voltage, typical values

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

Fig 11. Gate-source threshold voltage as a function of

junction temperature

Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aad675

0

2000

4000

6000

8000

10000

12000

036

9

12

C

(pF)

03aa35

06

4

2

(A)

min

typ

max

−60

180

120

060

003aad280

2

3

1

4

5

(V)

0

max

typ

min

003aad773

0

1

2

3

−60

0

60

120

180

a