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NCP3337MN250R2G Datasheet(PDF) 7 Page - ON Semiconductor

Part # NCP3337MN250R2G
Description  Ultra High Accuracy, Low Iq, 500 mA with Power Good Low Dropout Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP3337MN250R2G Datasheet(HTML) 7 Page - ON Semiconductor

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NCP3337
http://onsemi.com
7
ELECTRICAL CHARACTERISTICS − 3.3 V (Vout = 3.3 V typical, Vin = 3.7 V, TA = −40°C to +85°C, unless otherwise noted,
Note 8)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (Accuracy) Vin
Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C
Vout
−0.90%
3.27
3.3
0.90%
3.33
V
Output Voltage (Accuracy)
Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C
Vout
−1.40%
3.254
3.3
1.40%
3.346
V
Output Voltage (Accuracy)
Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C
Vout
−1.50%
3.325
3.3
1.50%
3.35
V
Line Regulation
Vin = 3.7 V to 12 V, Iload = 0.1 mA
LineReg
0.04
mV/V
Load Regulation
Vin = 3.7 V, Iload = 0.1 mA to 500 mA
LoadReg
0.04
mV/mA
Dropout Voltage
Iload = 500 mA
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
VDO
340
230
110
10
mV
Peak Output Current (See Figure 14)
Ipk
500
700
800
mA
Short Output Current (See Figure 14) Vin < 7 V, TA = 25°C
Isc
900
mA
Thermal Shutdown / Hysteresis
TJ
160/10
°C
Ground Current
In Regulation
Iload = 500 mA (Note 8)
Iload = 300 mA
Iload = 50 mA
Iload = 0.1 mA
In Dropout
Vin = 3.7 V, Iload = 0.1 mA
In Shutdown
VSD = 0 V
IGND
IGNDsh
9
4.6
0.8
14
7.5
2.5
220
500
1
mA
mA
mA
mA
Output Noise
Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF
Vnoise
69
46
mVrms
Power Good Voltage
Low Threshold
Hysteresis
High Threshold
Velft
93
95
2
97
99
% of
Vout
Power Good Pin Voltage Saturation (Ief = 1.0 mA)
Vefdo
200
mV
Power Good Pin Leakage
Iefleak
1
mA
Power Good Blanking Time (Note 9)
tef
50
ms
Shutdown
Threshold Voltage ON
Threshold Voltage OFF
VSD
2
0.4
V
SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin
ISD
0.07
1
mA
Output Current In Shutdown Mode, Vout = 0 V
IOSD
0.07
1
mA
Reverse Bias Protection, Current Flowing from the Output Pin to GND
(Vin = 0 V, Vout_forced = 3.3 V)
IOUTR
10
mA
8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. Can be disabled per customer request.


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