CM200RX-12A datasheet(4/6 Pages) POWEREX

Part #	CM200RX-12A

Description	Six IGBTMOD Brake NX-Series Module 200 Amperes/600 Volts

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Manufacturer	POWEREX [Powerex Power Semiconductors]

Direct Link	http://www.pwrx.com

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CM200RX-12A

Six IGBTMOD™ + Brake NX-Series Module

200 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272

4

Rev. 11/08

Electrical and Mechanical Characteristics,

Tj = 25°C unless otherwise specified

Brake Sector

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector Cutoff Current

ICES

VCE = VCES, VGE = 0V

—

1.0

mA

Gate-Emitter Threshold Voltage

VGE(th)

IC = 10mA

5

6

7

Volts

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

—

0.5

µA

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 100A, VGE = 15V, Tj = 25°C

—

1.7

2.1

Volts

IC = 100A, VGE = 15V, Tj = 125°C

—

1.9

—

Volts

IC = 100A, VGE = 15V, Chip

—

1.6

—

Volts

Input Capacitance

Cies

—

13.3

nF

Output Capacitance

Coes

VCE = 10V, VGE = 0V

—

1.4

nF

Reverse Transfer Capacitance

Cres

—

0.45

nF

Total Gate Charge

QG

VCC = 300V, IC = 100A, VGE = 15V

—

300

—

nC

Repetitive Reverse Current*

IRRM

VR = VRRM

—

1.0

mA

Forward Voltage Drop *

VF

IF = 100A, Tj = 25°C

—

2.0

2.8

Volts

IF = 100A, Tj = 125°C

—

1.95

—

Volts

IF = 100A, Chip

—

1.9

—

Volts

Thermal and Mechanical Characteristics,

Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case**

Rth(j-c)Q

Per IGBT

—

0.31

°C/W

Thermal Resistance, Junction to Case**

Rth(j-c)D

Per FWDi

—

0.59

°C/W

Contact Thermal Resistance**

Rth(j-f)

Thermal Grease Applied

—

0.015

—

°C/W

Internal Gate Resistance

RGint

TC = 25°C

—

0

—

Ω

External Gate Resistance

RG

6

—

62

Ω

NTC Thermistor Sector,

Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Zero Power Resistance

R

TC = 25°C

4.85

5.00

5.15

kΩ

Deviation of Resistance

∆R/R

TC = 100°C, R100 = 493Ω

–7.3

—

+7.8

%

B Constant

B(25/50)

B = (InR1 – InR2) / (1/T1 – 1/T2)***

—

3375

—

K

Power Dissipation

P25

TC = 25°C

—

10

mW

*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

**TC, Tf measured point is just under the chips.

***R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = t(°C) + 273.15

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