SGH23N60UF datasheet(2/7 Pages) FAIRCHILD

Part #	SGH23N60UF

Description	N-CHANNEL IGBT

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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ELECTRICAL CHARACTERISTICS

(Tc=25

°C,Unless Otherwise Specified)

Characteristics

C - E Breakdown Voltage

Temperature Coeff. of

Breakdown Voltage

G - E threshold voltage

Collector cutoff Current

G - E leakage Current

Collector to Emitter

saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn on delay time

Turn on rise time

Turn off delay time

Turn off fall time

Turn on Switching Loss

Turn off Switching Loss

Total Switching Loss

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

Internal Emitter Inductance

Symbol

BV

CES

∆V

CES/

∆T

J

V

GE(th)

I

CES

I

GES

V

CE(sat)

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Qg

Qge

Qgc

Le

Min

600

-

4.0

-

Typ

-

0.6

5.5

-

1.95

2.6

720

65

26

12

20

55

100

0.11

0.19

0.3

48

11

14

7.5

Max

-

7.5

250

100

2.6

-

85

220

-

0.5

72

16

21

-

Units

V

V/

°C

V

uA

nA

V

pF

ns

mJ

nC

nH

Test Conditions

V

GE = 0V , IC = 250uA

V

GE = 0V , IC = 1mA

I

C = 12mA , VCE = VGE

V

CE = VCES , VGE = 0V

V

GE = VGES , VCE = 0V

Ic=12A, V

GE = 15V

Ic=23A, V

GE = 15V

V

GE = 0V , f = 1MHz

V

CE = 30V

V

CC = 300V , IC = 12A

V

GE = 15V

R

G = 23Ω

Inductive Load

Vcc = 300V

V

GE = 15V

Ic = 12A

Measured 5mm from PKG

SGH23N60UF

N-CHANNEL IGBT

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SGH23N60UF Datasheet(PDF) 2 Page - Fairchild Semiconductor

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