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DRV1100U-2K5 Datasheet(PDF) 3 Page - Texas Instruments |
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DRV1100U-2K5 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 ® DRV1100 PIN CONFIGURATIONS Top View Analog Inputs: Current .............................................. ±100mA, Momentary ±10mA, Continuous Voltage ....................................... GND –0.3V to VDD +0.2V Analog Outputs Short Circuit to Ground (+25 °C) ..................... Momentary Analog Outputs Short Circuit to VDD (+25°C) ........................... Momentary VDD to GND .............................................................................. –0.3V to 6V Junction Temperature ................................................................... +150 °C Storage Temperature Range .......................................... –40 °C to +125°C Lead Temperature (soldering, 3s) ................................................. +260 °C Power Dissipation .............................. (See Thermal/Analysis Discussion) ABSOLUTE MAXIMUM RATINGS In+ 2 67 41 3 5 8 In– Out+ +5V GND Out– PACKAGE/ORDERING INFORMATION PACKAGE DRAWING PRODUCT PACKAGE NUMBER(1) DRV1100P 8-Pin PDIP 006 DRV1100U 8-Lead SO-8 182 NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. GND In+ In– GND Out– V DD (+5V) V DD (+5V) Out+ 1 2 3 4 8 7 6 5 |
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