CM200DX-24S datasheet(3/9 Pages) POWEREX

Part #	CM200DX-24S

Description	Dual IGBT NX-Series Module 200 Amperes/1200 Volts

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Manufacturer	POWEREX [Powerex Power Semiconductors]

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CM200DX-24S

Dual IGBT NX-Series Module

200 Amperes/1200 Volts

3

05/13 Rev. 5

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

Electrical Characteristics,

Tj = 25°C unless otherwise specified

Inverter Part IGBT/FWDi

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Emitter Cutoff Current

ICES

VCE = VCES, VGE = 0V

—

1.0

mA

Gate-Emitter Leakage Current

IGES

VGE = VGES, VCE = 0V

—

0.5

µA

Gate-Emitter Threshold Voltage

VGE(th)

IC = 20mA, VCE = 10V

5.4

6.0

6.6

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 200A, VGE = 15V, Tj = 25°C*5

—

1.80

2.25

Volts

(Terminal)

IC = 200A, VGE = 15V, Tj = 125°C*5

—

2.00

—

Volts

IC = 200A, VGE = 15V, Tj = 150°C*5

—

2.05

—

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 200A, VGE = 15V, Tj = 25°C*5

—

1.70

2.15

Volts

(Chip)

IC = 200A, VGE = 15V, Tj = 125°C*5

—

1.90

—

Volts

IC = 200A, VGE = 15V, Tj = 150°C*5

—

1.95

—

Volts

Input Capacitance

Cies

—

20

nF

Output Capacitance

Coes

VCE = 10V, VGE = 0V

—

4.0

nF

Reverse Transfer Capacitance

Cres

—

0.33

nF

Gate Charge

QG

VCC = 600V, IC = 200A, VGE = 15V

—

466

—

nC

Turn-on Delay Time

td(on)

—

800

ns

Rise Time

tr

VCC = 600V, IC = 200A, VGE = ±15V,

—

200

ns

Turn-off Delay Time

td(off)

RG = 0Ω, Inductive Load

—

600

ns

Fall Time

tf

—

300

ns

Emitter-Collector Voltage

VEC*1

IE = 200A, VGE = 0V, Tj = 25°C*5

—

1.80

2.25

Volts

(Terminal)

IE = 200A, VGE = 0V, Tj = 125°C*5

—

1.80

—

Volts

IE = 200A, VGE = 0V, Tj = 150°C*5

—

1.80

—

Volts

Emitter-Collector Voltage

VEC*1

IE = 200A, VGE = 0V, Tj = 25°C*5

—

1.70

2.15

Volts

(Chip)

IE = 200A, VGE = 0V, Tj = 125°C*5

—

1.70

—

Volts

IE = 200A, VGE = 0V, Tj = 150°C*5

—

1.70

—

Volts

Reverse Recovery Time

trr*1

VCC = 600V, IE = 200A, VGE = ±15V

—

300

ns

Reverse Recovery Charge

Qrr*1

RG = 0Ω, Inductive Load

—

10.7

—

µC

Turn-on Switching Energy per Pulse

Eon

VCC = 600V, IC = IE = 200A, VGE = ±15V

—

30.7

—

mJ

Turn-off Switching Energy per Pulse

Eoff

RG = 0Ω, Tj = 150°C

—

21.5

—

mJ

Reverse Recovery Energy per Pulse

Err*1

Inductive Load

—

14.2

—

mJ

Internal Lead Resistance

RCC' + EE'

Main Terminals-Chip,

—

1.1

mΩ

Per Switch,TC = 25°C*4

Internal Gate Resistance

rg

Per Switch

—

9.8

—

Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling

diode (FWDi).

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface

(mounting side) of the baseplate and the heatsink side just under the chips.

Refer to the figure to the right for chip location.

The heatsink thermal resistance should be measured just under the chips.

*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

1

2

3 4 5

6

7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22

23

24

48

47

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

0

28.2

41.7

38.1

29.1

LABEL SIDE

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor

Each mark points to the center position of each chip.

Th

Tr2

Di2

Tr1

Di1

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