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CM100MX-12A Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM100MX-12A Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 7 page  CM100MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 Rev. 11/11 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol CM100MX-12A Units Inverter Part IGBT/FWDi Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 75°C)*2,*4 IC 100 Amperes Collector Current (Pulse)*3 ICRM 200 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 400 Watts Emitter Current*2 IE*1 10 Amperes Emitter Current (Pulse)*3 IERM*1 200 Amperes Brake Part IGBT/ClampDi Collector-Emitter Voltage (G-E Short) VCES 600 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (DC, TC = 97°C)*2,*4 IC 50 Amperes Collector Current (Pulse)*3 ICRM 100 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 280 Watts Repetitive Peak Reverse Voltage VRRM 600 Volts Forward Current (TC = 25°C)*2 IF 50 Amperes Forward Current (Pulse)*3 IFRM 100 Amperes Converter Part ConvDi Repetitive Peak Reverse Voltage VRRM 800 Volts Recommended AC Input Voltage Ea 220 Volts DC Output Current (3-Phase Full Wave Rectifying, f = 60Hz,TC = 125°C)*2,*4 IO 100 Amperes Surge Forward Current (Sine Half-wave 1 Cycle Peak Value, f = 60Hz, Non-repetitive) IFSM 1000 Amperes Current Square Time (Value for One Cycle of Surge Current) I2t 4160 A2s Module Isolation Voltage (Charged Part to Baseplate, RMS, f = 60Hz, AC 1 min.) VISO 2500 Volts Junction Temperature Tj -40 ~ +150 °C Storage Temperature Tstg -40 ~ +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 VP WP WN Br VN UN UP 29.2 30.0 44.8 25.8 43.2 26.8 29.8 Th 21.6 15.6 22.6 37.4 Dimensions in mm (Tolerance: ±1mm) IGBT FWDi Converter Diode NTC Thermistor Chip Location (Top View) UP TN RP SP TP SN RN VP WP WN VN UN Br |
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Similar Description - CM100MX-12A |
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