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LMV722MM Datasheet(PDF) 1 Page - Texas Instruments |
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LMV722MM Datasheet(HTML) 1 Page - Texas Instruments |
1 / 25 page LMV721-N, LMV722-N www.ti.com SNOS414I – AUGUST 1999 – REVISED AUGUST 2013 LMV721-N/LMV722 10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier Check for Samples: LMV721-N, LMV722-N 1 FEATURES DESCRIPTION The LMV721-N (Single) and LMV722 (Dual) are low 2 • (For Typical, 5 V Supply Values; Unless noise, low voltage, and low power op amps, that can Otherwise Noted) be designed into a wide range of applications. The • Ensured 2.2V and 5.0V Performance LMV721-N/LMV722 has a unity gain bandwidth of • Low Supply Current LMV721-N/2 10MHz, a slew rate of 5V/us, and a quiescent current of 930uA/amplifier at 2.2V. 930µA/Amplifier at 2.2V • High Unity-Gain Bandwidth 10MHz The LMV721-N/722 are designed to provide optimal performance in low voltage and low noise systems. • Rail-to-Rail Output Swing They provide rail-to-rail output swing into heavy – at 600 Ω Load 120mV from Either Rail at loads. The input common-mode voltage range 2.2V includes ground, and the maximum input offset – at 2k Ω Load 50mV from Either Rail at 2.2V voltage are 3.5mV (Over Temp) for the LMV721- N/LMV722. Their capacitive load capability is also • Input Common Mode Voltage Range Includes good at low supply voltages. The operating range is Ground from 2.2V to 5.5V. • Silicon Dust, SC70-5 Package 2.0x2.0x1.0 mm The chip is built with TI's advanced Submicron • Input Voltage Noise 9 nV/ √Hz at f = 1KHz Silicon-Gate BiCMOS process. The single version, LMV721-N, is available in 5 pin SOT-23 and a SC70 APPLICATIONS (new) package. The dual version, LMV722, is • Cellular an Cordless Phones available in an SOIC-8 and VSSOP-8 package. • Active Filter and Buffers • Laptops and PDAs • Battery Powered Electronics Typical Application Figure 1. A Battery Powered Microphone Preamplifier These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Copyright © 1999–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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