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CM75RX-24S Datasheet(PDF) 2 Page - Powerex Power Semiconductors

Part # CM75RX-24S
Description  Six IGBT Brake NX-Series Module 75 Amperes/1200 Volts
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

CM75RX-24S Datasheet(HTML) 2 Page - Powerex Power Semiconductors

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CM75RX-24S
Six IGBT + Brake NX-Series Module
75 Amperes/1200 Volts
2
03/13 Rev. 5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings,
Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Rating
Units
Collector-Emitter Voltage (VGE = 0V)
VCES
1200
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES
±20
Volts
Collector Current (DC, TC = 122°C)*2,*4
IC
75
Amperes
Collector Current (Pulse, Repetitive)*3
ICRM
150
Amperes
Total Power Dissipation (TC = 25°C)*2,*4
Ptot
600
Watts
Emitter Current*2
IE*1
75
Amperes
Emitter Current (Pulse, Repetitive)*3
IERM*1
150
Amperes
Brake Part IGBT/ClampDi
Characteristics
Symbol
Rating
Units
Collector-Emitter Voltage (VGE = 0V)
VCES
1200
Volts
Gate-Emitter Voltage (VCE = 0V)
VGES
±20
Volts
Collector Current (DC, TC = 125°C)*2,*4
IC
50
Amperes
Collector Current (Pulse, Repetitive)*3
ICRM
100
Amperes
Total Power Dissipation (TC = 25°C)*2,*4
Ptot
425
Watts
Repetitive Peak Reverse Voltage (VGE = 0V)
VRRM
1200
Volts
Forward Current*2
IE*1
50
Amperes
Forward Current (Pulse, Repetitive)*3
IERM*1
100
Amperes
Module
Characteristics
Symbol
Rating
Units
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
VISO
2500
Volts
Maximum Junction Temperature, Instantaneous Event (Overload)
Tj(max)
175
°C
Maximum Case Temperature*4
TC(max)
125
°C
Operating Junction Temperature, Continuous Operation (Under Switching)
Tj(op)
-40 to +150
°C
Storage Temperature
Tstg
-40 to +125
°C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
12
35
36
1
2
3
4
11
10
9
8
7
6
5
0
0
18.6
20.0
21.0
27.8 26.8
28.5
29.5
35.3
36.3
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT
Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp
Th: NTC Thermistor
28.5
35.3
40.5
26.8
20.0
Di
UP
Di
VP
Di
WP
Tr
UP
Tr
VP
Tr
WP
Di
UN
Di
VN
Di
WN
Di
Br
Tr
Br
Tr
UN
Tr
VN
Tr
WN
Th


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