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CM75RX-24S Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM75RX-24S Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 13 page CM75RX-24S Six IGBT + Brake NX-Series Module 75 Amperes/1200 Volts 2 03/13 Rev. 5 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 122°C)*2,*4 IC 75 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 150 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 600 Watts Emitter Current*2 IE*1 75 Amperes Emitter Current (Pulse, Repetitive)*3 IERM*1 150 Amperes Brake Part IGBT/ClampDi Characteristics Symbol Rating Units Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, TC = 125°C)*2,*4 IC 50 Amperes Collector Current (Pulse, Repetitive)*3 ICRM 100 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 425 Watts Repetitive Peak Reverse Voltage (VGE = 0V) VRRM 1200 Volts Forward Current*2 IE*1 50 Amperes Forward Current (Pulse, Repetitive)*3 IERM*1 100 Amperes Module Characteristics Symbol Rating Units Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO 2500 Volts Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max) 175 °C Maximum Case Temperature*4 TC(max) 125 °C Operating Junction Temperature, Continuous Operation (Under Switching) Tj(op) -40 to +150 °C Storage Temperature Tstg -40 to +125 °C *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 35 36 1 2 3 4 11 10 9 8 7 6 5 0 0 18.6 20.0 21.0 27.8 26.8 28.5 29.5 35.3 36.3 LABEL SIDE Each mark points to the center position of each chip. Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi DiBr: Clamp Th: NTC Thermistor 28.5 35.3 40.5 26.8 20.0 Di UP Di VP Di WP Tr UP Tr VP Tr WP Di UN Di VN Di WN Di Br Tr Br Tr UN Tr VN Tr WN Th |
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Similar Description - CM75RX-24S |
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