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CM75MX-12A Datasheet(PDF) 3 Page - Powerex Power Semiconductors |
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CM75MX-12A Datasheet(HTML) 3 Page - Powerex Power Semiconductors |
3 / 7 page CM75MX-12A NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 Rev. 11/11 Electrical Characteristics, Tj = 25°C unless otherwise specified Inverter Part IGBT/FWDi Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) Tj = 25°C, IC = 75A, VGE = 15V*5 — 1.7 2.1 Volts Tj = 125°C, IC = 75A, VGE = 15V*5 — 1.9 — Volts IC = 75A, VGE = 15V, Chip*5 — 1.6 — Volts Input Capacitance Cies — — 7.5 nF Output Capacitance Coes VCE = 10V, VGE = 0V — — 1.0 nF Reverse Transfer Capacitance Cres — — 0.3 nF Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V — 200 — nC Inductive Turn-on Delay Time td(on) — — 100 ns Load Turn-on Rise Time tr VCC = 300V, IC = 75A, VGE = ±15V, — — 100 ns Switch Turn-off Delay Time td(off) RG = 8.2Ω, Inductive Load — — 300 ns Time Turn-off Fall Time tf — — 600 ns Emitter-Collector Voltage VEC*1 Tj = 25°C, IE = 75A, VGE = 0V*5 — 2.0 2.8 Volts Tj = 125°C, IE = 75A, VGE = 0V*5 — 1.95 — Volts IE = 75A, VGE = 0V, Chip — 1.9 — Volts Reverse Recovery Time trr*1 VCC = 300V, IE = 75A, VGE = ±15V — — 200 ns Reverse Recovery Charge Qrr*1 RG = 8.2Ω, Inductive Load — 1.8 — µC Internal Gate Resistance rg TC = 25°C, Per Switch — 0 — Ω External Gate Resistance RG 8.0 — 83 Ω *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. |
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Similar Description - CM75MX-12A |
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