2

CM75BU-12H

Four IGBTMOD™ U-Series Module

75 Amperes/600 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Ratings

Symbol

CM75BU-12H

Units

Junction Temperature

-40 to 150

°C

Storage Temperature

-40 to 125

°C

Collector-Emitter Voltage (G-E SHORT)

600

Volts

Gate-Emitter Voltage (C-E SHORT)

±20

Volts

75

Amperes

150*

Amperes

75

Amperes

Peak Emitter Current**

150*

Amperes

310

Watts

Mounting Torque, M4 Main Terminal

–

15

in-lb

Mounting Torque, M5 Mounting

–

31

in-lb

Weight

–

390

Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

2500

Volts

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

–

–

1

mA

Gate Leakage Current

–

–

0.5

µA

Gate-Emitter Threshold Voltage

4.5

6

7.5

Volts

Collector-Emitter Saturation Voltage

–

2.4

3.0

Volts

–

2.6

–

Volts

Total Gate Charge

–

150

–

nC

Emitter-Collector Voltage*

–

–

2.6

Volts

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

–

–

6.6

nf

Output Capacitance

–

–

3.6

nf

Reverse Transfer Capacitance

–

–

1.0

nf

Resistive

Turn-on Delay Time

–

–

100

ns

Load

Rise Time

–

–

250

ns

Switch

Turn-off Delay Time

–

–

200

ns

Times

Fall Time

Load Switching Operation

–

–

300

ns

Diode Reverse Recovery Time

–

–

160

ns

Diode Reverse Recovery Charge

–

0.18

–

µC

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

Per IGBT 1/4 Module

–

–

0.4

°C/W

Thermal Resistance, Junction to Case

Per FWDi 1/4 Module

–

–

0.9

°C/W

Contact Thermal Resistance

Per Module, Thermal Grease Applied

–

0.025

–

°C/W

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