CBC910-BDC-WP datasheet(6/14 Pages) CYMBET

Part #	CBC910-BDC-WP

Description	Charge Pump and Battery Management ASIC

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Manufacturer	CYMBET [Cymbet Corporation]

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6 / 14 page

CBC910

DS-72-11 Rev 5

Page 6 of 14

Preliminary

Note:Allspecificationscontainedwithinthisdocumentaresubjecttochangewithoutnotice

CHARGE PUMP CHARACTERISTICS

VDD = 2.5V to 5.5V, Ta = -40ºC to +85ºC

CHARACTERISTIC

SYMBOL

CONDITION

MIN

MAX

UNITS

ENABLE=VDD to Charge

Pump Active

tCPON

ENABLE to 3rd charge pump

pulse, VDD=3.3V

60

80

µs

ENABLE Falling to

Charge Pump Inactive

tCPOFF

-

0

1

µs

Charge Pump Frequency

fCP

-

120

KHz (1)

Charge Pump

Resistance

RCP

Delta VBAT, for IBAT charging

current of 1µA to 100µA

CFLY=0.1µF, CBAT=1.0µF

150

300

Ω

VCHG Output Voltage

VCP

CFLY=0.1µF, CBAT=1.0µF,

IOUT=1µA, Temp=+25ºC

4.075

4.125

V

VCHG Temp. Coefficient

TCCP

IOUT=1µA, Temp=+25ºC

-2.0

-2.4

mV/ºC

Charge Pump Current

Drive

ICP

IBAT=1mA

CFLY=0.1µF, CBAT=1.0µF

1.0

-

mA

Charge Pump on Voltage

VENABLE

ENABLE=VDD

2.5

-

V

(1) fCP = 1/tCPPER

ADDITIONAL CHARACTERISTICS

Ta = -40ºC to +85ºC

CHARACTERISTIC

SYMBOL

CONDITION

LIMITS

UNITS

MIN

MAX

VBAT Cutoff Threshold

VBATCO

IOUT=1µA

2.75

3.25

V

Cutoff Temp. Coefficient

TCCO

-

+1

+2

mV/ºC

VBAT Cutoff Delay Time

tCOOFF

VBAT from 40mV above to

20mV below VBATCO

IOUT=1µA

40

-

ms

VOUT Dead Time, VDD

Rising (2)

tRSBR

IOUT=1mA

VBAT=4.1V

0.2

2.0

µs

VOUT Dead Time, VDD

Falling (2)

tRSBF

VBAT=4.1V

0.2

2.0

µs

Bypass Resistance

ROUT

-

2.5

Ω

(2) Dead time is the time period when the VOUT pin is floating. Size the holding capacitor accordingly.

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