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AOI2N60A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOI2N60A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AOD2N60A/AOI2N60A Symbol Min Typ Max Units 600 700 BVDSS /∆TJ 0.7 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.4 4 4.5 V RDS(ON) 3.9 4.7 Ω gFS 2.8 S VSD 0.79 1 V IS Maximum Body-Diode Continuous Current 2 A ISM 6 A Ciss 295 pF Coss 30 pF Crss 2.3 pF Rg 3.2 Ω Qg 6.5 11 nC Qgs 1.5 nC Qgd 1.8 nC tD(on) 16 ns tr 11 ns tD(off) 28 ns Static Drain-Source On-Resistance VGS=10V, ID=1A Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=300V, ID=2A, RG=25Ω Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions BVDSS µA V Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=0V, VGS=±30V Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V Gate Drain Charge VDS=5V, ID=250µA VDS=480V, TJ=125°C IS=1A,VGS=0V VDS=40V, ID=1A Forward Transconductance DYNAMIC PARAMETERS Diode Forward Voltage Gate resistance f=1MHz Total Gate Charge VGS=10V, VDS=480V, ID=2A Gate Source Charge Maximum Body-Diode Pulsed Current C Input Capacitance Output Capacitance Turn-On DelayTime tD(off) 28 ns tf 14 ns trr 268 ns Qrr 1.6 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=2A,dI/dt=100A/µs,VDS=100V Turn-Off DelayTime G Turn-Off Fall Time Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, I AS=1.8A, VDD=150V, RG=10Ω, Starting TJ=25°C. I. L=1.0mH, V DD=150V, RG=25 , Starting T J=25°C. Rev.1.0 September 2013 www.aosmd.com Page 2 of 6 万和兴电子有限公司 www.whxpcb.com |
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