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IRFR9310, IRFU9310, SiHFR9310, SiHFU9310

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-

-

110

°C/W

Maximum Junction-to-Ambient

--

50

Maximum Junction-to-Case (Drain)

--

2.5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

- 400

-

-

V

ΔV

-

- 0.41

-

V/°C

Gate-Source Threshold Voltage

- 2.0

-

- 4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

- 100

µA

-

-

- 500

Drain-Source On-State Resistance

--

7.0

Ω

Forward Transconductance

0.91

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

270

-

pF

Output Capacitance

-50

-

Reverse Transfer Capacitance

-8.0

-

Total Gate Charge

--

13

nC

Gate-Source Charge

--

3.2

Gate-Drain Charge

--

5.0

Turn-On Delay Time

-11

-

ns

Rise Time

-10

-

Turn-Off Delay Time

-25

-

Fall Time

-24

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

-4.5

-

nH

Internal Source Inductance

-7.5

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

- 1.9

A

--

- 7.6

Body Diode Voltage

--

- 4.0

V

Body Diode Reverse Recovery Time

-

170

260

ns

Body Diode Reverse Recovery Charge

-

640

960

nC

Forward Turn-On Time

D

S

G

S

D

G