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SF4007 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SF4007 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page SF4001, SF4002, SF4003, SF4004, SF4005, SF4006, SF4007 www.vishay.com Vishay Semiconductors Rev. 1.9, 11-Sep-12 2 Document Number: 86060 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Average forward current Lead length l = 10 mm IFAV 1A Junction and storage temperature range Tj = Tstg - 55 to + 175 °C Non repetitive reverse avalanche energy I(BR)R = 0.4 A ER 10 mJ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 1 A SF4001 VF -- 1 V SF4002 VF -- 1 V SF4003 VF -- 1 V SF4004 VF -- 1 V SF4005 VF -- 1.7 V SF4006 VF -- 1.7 V SF4007 VF -- 1.7 V Reverse current VR = VRRM IR -- 5 μA VR = VRRM, Tj = 125 °C IR - - 50 μA Reverse breakdown voltage IR = 100 μA SF4001 V(BR)R 50 - - V SF4002 V(BR)R 100 - - V SF4003 V(BR)R 200 - - V SF4004 V(BR)R 400 - - V SF4005 V(BR)R 600 - - V SF4006 V(BR)R 800 - - V SF4007 V(BR)R 1000 - - V Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A SF4001 trr - - 50 ns SF4002 trr - - 50 ns SF4003 trr - - 50 ns SF4004 trr - - 50 ns SF4005 trr - - 75 ns SF4006 trr - - 75 ns SF4007 trr - - 75 ns |
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