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AO4446 Datasheet(PDF) 1 Page - shenzhen wanhexing Electronics Co.,Ltd

Part # AO4446
Description  30V N-Channel MOSFET
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Manufacturer  WHXPCB [shenzhen wanhexing Electronics Co.,Ltd]
Direct Link  http://www.whxpcb.com
Logo WHXPCB - shenzhen wanhexing Electronics Co.,Ltd

AO4446 Datasheet(HTML) 1 Page - shenzhen wanhexing Electronics Co.,Ltd

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background image
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
33
40
59
75
RθJL
16
24
W
Junction and Storage Temperature Range
A
°C
3
2.1
-55 to 150
TA=70°C
ID
A
Continuous Drain
Current
A
Maximum
Units
Parameter
TA=25°C
TA=70°C
30
Drain-Source Voltage
Maximum Junction-to-Ambient
A
Steady-State
15
12
40
Avalanche Current
B
20
PD
Repetitive avalanche energy L=0.1mH
B
50
°C/W
°C/W
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
±20
Pulsed Drain Current
B
Power Dissipation
TA=25°C
Gate-Source Voltage
mJ
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
AO4446
30V N-Channel MOSFET
Product Summary
VDS (V) = 30V
ID = 15A (VGS = 10V)
RDS(ON) < 8.5mΩ (VGS = 10V)
RDS(ON) < 14.5mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
General Description
The AO4446 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. This device is ideally suited for use
in PWM applications.
SOIC-8
Top View
Bottom View
D
D
D
D
S
S
S
G
G
D
S
Alpha & Omega Semiconductor, Ltd.
万和兴电子有限公司 www.whxpcb.com


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